FERD20U60DJFD - Field Effect Rectifier - 艾金森 Dratk FERD30H100S - 100V Field-Effect Rectifier Diode - 艾金森 Dratk FERD30H60C - Field-Effect Rectifier Diode 60V - 艾金森 Dratk FERD30L60C - Field-Effect Rectifier Diode 60V - 艾金森 Dratk FERD30M45C - Field effect rectifier - 艾金森 Dratk FERD30SM100DJF - Field Effect Rectifier - 艾金森 Dratk FERD30SM100S - Field Effect Rectifier - 艾金森 Dratk FERD40H100S - 100V Field-Effect Rectifier Diode - 艾金森 Dratk FERD40L60C - Field-Effect Rectifier Diode 60V - 艾金森 Dratk FERD40M45C - Field effect rectifier - 艾金森 Dratk FERD40U45C - Field effect rectifier - 艾金森 Dratk FERD40U50C - Field Effect Rectifier - 艾金森 Dratk FERD60M45C - Field effect rectifier - 艾金森 Dratk FERD60U45C - Field effect rectifier - 艾金森 Dratk FERD30M45 - Field effect rectifier - 艾金森 Dratk STPSC1006 - 600 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC10065 - 650 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC10H065 - 650 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC10H12 - 1200V Power Schottky Silicon Carbide diode - 艾金森 Dratk STPSC10H12C - 1200V Power Schottky Silicon Carbide diode - 艾金森 Dratk STPSC10TH13TI - Dual 650 V power Schottky silicon carbide diode in series - 艾金森 Dratk STPSC1206 - 600 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC12065 - 650 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC12H065 - 650 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC12H065C - 650 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC15H12 - 1200V Power Schottky Silicon Carbide Diode - 艾金森 Dratk STPSC16H065C - 650 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC20065 - 650 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC2006CW - 600 V power Schottky silicon-carbide diode - 艾金森 Dratk STPSC20H065C - 650 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC20H12 - 1200V power Schottky silicon-carbide diode - 艾金森 Dratk STPSC20H12C - 1200 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC2H12 - 1200 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC30H12C - 1200 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC40065C - 650 V power Schottky silicon-carbide diode - 艾金森 Dratk STPSC406 - 600 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC40H12C - 1200 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC4H065 - 650 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC5H12 - 1200 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC606 - 600 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC6H065 - 650 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC6H12 - 1200 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC6TH13TI - Dual 650 V power Schottky silicon carbide diode in series - 艾金森 Dratk STPSC806 - 600 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC8065 - 650 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC8H065 - 650 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC8H065C - 650 V power Schottky silicon carbide diode - 艾金森 Dratk STPSC8TH13TI - Dual 650 V power Schottky silicon carbide diode in series - 艾金森 Dratk LM139 - Low power quad voltage comparators - 艾金森 Dratk LM193 - Low power dual voltage comparator - 艾金森 Dratk
ISL8105A
600kHz, Single-Phase Sync Buck Converter PWM Controller with Integrated MOSFET Gate Drivers

热度 22

The ISL8105, ISL8105A is a simple single-phase PWM controller for a synchronous buck converter. It operates from +5V or +12V bias supply voltage. With integrated linear regulator, boot diode, and N-Channel MOSFET gate drivers, the ISL8105, ISL8105A reduces external component count and board space requirements. These make the IC suitable for a wide range of applications.

Utilizing voltage-mode control, the output voltage can be precisely regulated to as low as 0.6V. The 0.6V internal reference features a maximum tolerance of ±1.0% over the commercial temperature range, and ±1.5% over the industrial temperature range. Two fixed oscillator frequency versions are available; 300kHz (ISL8105 for high efficiency applications) and 600kHz (ISL8105A for fast transient applications).

The ISL8105, ISL8105A features the capability of safe start-up with pre-biased load. It also provides overcurrent protection by monitoring the ON-resistance of the bottom-side MOSFET to inhibit PWM operation appropriately. During start-up interval, the resistor connected to BGATE/BSOC pin is employed to program overcurrent protection condition. This approach simplifies the implementation and does not deteriorate converter efficiency.

  • Operates from +5V or +12V Bias Supply Voltage
    • 1.0V to 12V Input Voltage Range (up to 20V possible with restrictions; see "Input Voltage Considerations" on page 9)
    • 0.6V to VIN Output Voltage Range
      • 5V or 12V DC/DC Regulators
      • Industrial Power Systems
      • Telecom and Datacom Applications
      • Test and Measurement Instruments
      • Distributed DC/DC Power Architecture
      • Point of Load Modules
 
Alternatives
Parameters ISL8105A ISL8105 ISL6545 ISL6545A
VIN (min) (V)1 1 1 1
VIN (max) (V)12 12 12 12
VOUT (min) (V)0.6 0.6 0.6 0.6
VOUT (max) (V)5 5 5 5
IOUT (max) (A)25 25 25 25
VBIAS (min)4.9 V 4.9 V 4.5 V 4.5 V
VBIAS (max)14.4 V 14.4 V 14.4 V 14.4 V
IS (typ)3.2 mA 3.2 mA 3.2 mA 3.2 mA
Qualification LevelStandard Standard Standard Standard

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